- M. Chan, C. M. Tan, K. C. Lee, W. Kanert, C. S. Tan, “Non-destructive Degradation Study of Copper Wire Bond for Its Temperature Cycling Reliability Evaluation”,
*accepted in International Conference on Materials for Advanced Technologies*, Singapore, 28 June, 2015. - Cher Ming Tan and Udit Narula, “Revisit resistance monitoring techniques for measuring TSV/Solder resistance during Electromigration test”, (Invited talk) 2014 IEEE International Conference on Solid State and Integrated Circuits Technology, Guilin, China.
- Cher Ming Tan, “Extending electromigration modeling from test structures to Integrated circuit layout level”, Invited talk in
*International Reliability Physics Symposium*, 2014, USA - Zhang, K. Ghosh, L. Zhang, Y. Dong, H. Y. Li, C. M. Tan, G. Xia, and C. S. Tan, “TSV scaling with constant liner thickness and the related implications on thermo-mechanical stress, capacitance, and leakage current,” in
*Int. Conf. on Solid State Devices and Materials*, Kyoto, Japan, 25-27th Sep. 2012. - Ghosh, J. Zhang, L. Zhang, Y. Dong, H. Y. Li, C. M. Tan, G. Xia, and C. S. Tan, “Strategy for TSV scaling with consideration on thermo-mechanical stress and acceptable delay,” in
*Int. Microsystems, Packaging, Assembly Circuits Technology Conf.*, Taipei, Taiwan, 24-26th Oct. 2012. - M. Tan and C. Fu. “Effectiveness of Reservoir Length on Electromigration lifetime enhancement for ULSI Interconnects with advanced technology nodes (Invited Talk),” in
*Proc. of IEEE ICSICT*, Xi’an, China, 29th Oct. – 1st Nov. 2012. - Li and C. M. Tan. “Black’s equation for today’s ULSI interconnect electromigration (invited),” in
*Proc. of IEEE Electron Devices and Solid State Circuits*, China, 2011. - M. Tan, Z. Gan, and W. Li. “Applications of Finite element Methods for Reliability Study of ULSI Interconnections (Invited Talk),” presented at Int. Conf. on Materials for Advanced Technologies, Singapore, Jul. 2011.
- M. L Nai, Y. D. Han, H. Y. Jing, L. Y. Xu, C. M. Tan, and J. Wei. “Ageing study of interfacial intermetallic growth in a lead-free solder reinforced with Ni-coated carbon nanotubes,” in
*IEEE Electronics Packaging Technology Conf.*, 2010. - D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei. “Indentation creep and hardness of a Sn-Ag-Cu solder reinforced with Ni coated carbon nanotubes,” in
*IEEE Int. Nanoelectronic Conf.*, Hong Kong , 2010, pp. 292-295. - Hou and C. M. Tan. “Requirement for accurate interconnect temperature measurement for Electromigration test,” in
*IEEE Int. Symp. on Integrated Circuits*, Singapore, 2009. - M. L. Nai, Y. D. Han, H. Y. Jing, C. M. Tan, and J. Wei. “Enhancing the properties of a Lead-free solder with the addition of Ni coated carbon nanotubes,” in
*Int. Conf. on Electronic Packaging Technology & High Density Packaging*, China, 2009, pp. 540-543. - D. Han, S. M. L Nai, Y. C. Liu, C. M. Tan, and J. Wei. “Indentation size effect on the hardness of a Sn-Ag-Cu Solder,” in
*Int. Mechanical Engineering Congress and Exposition*, 2009. - D. Han, H. Y. Jing, S. M. L. Nai, Y. C. Liu, C. M. Tan, J. Wei, and L. Y. Xu. “Nanomechanical properties of a Sn-Ag-Cu solder reinforced with Ni coated carbon nanotubes,” in
*Int. Conf. on Materials for Advanced Technologies*, 2009. - D. Han, H. Y. Jing, S. M. L. Nai, Y. C. Liu, C. M. Tan, J. Wei, and L.Y. Xu. “Indentation size effect on the creep behavior of a Sn-Ag-Cu solder,” in
*Int. Conf. on Materials for Advanced Technologies*, 2009. - M. Tan and Y. Liu. “Finite element modeling of Electromigration in ULSI Interconnections and in solder bumpings of a package system,” Tutorial in
*IEEE Int. Electronic Packaging and Technology Conf.*, 2008. - Hou and C. M. Tan. “The multiple temperature heater platforms for solder Electromigration test conducted at room temperature,” in
*IEEE Electronics Packaging Technology Conf.*, Singapore, 2008. - D. Han, C. M. Tan and W. Jun. “A new creep model for Sn-Ag-Cu lead-free composite solders: incorporating back stress,” in
*IEEE Electronics Packaging Technology Conf.*, Singapore, 2008. - Cheng, A. Lee, Z. X. Lim, N. Yantara, S. Z. Y. Loo, T. Y. Tee, C. M. Tan and Z. Chen. “Fracture Toughness Assessment of a solder joint using double cantilever beam specimens,” in
*IEEE Electronics Packaging Technology Conf.*, Singapore, 2008. - M. Tan and W. Li. “A holistic numerical modeling for interconnect electromigration,” (invited) presented at Int. Materials Research Society Conf., Chongqing, China, Jun. 2008.
- Hou and C. M. Tan. “Size effect in Cu nano-interconnects and its implication on electromigration,” presented at IEEE Int. Nanoelectronics Conf., Shanghai, China, Mar. 2008.
- Li and C. M. Tan. “Enhanced finite element modelling of Cu electromigration using ANSYS and Matlab,” in
*European Symp. on Reliability of Electron Devices, Failure physics and analysis*, 2007. - M. Tan. “Electromigration in ULSI Interconnection (keynote),” in
*1st Microreliability and Nanoreliability Congress*, 2007. - Hou and C. M. Tan. “Blech effect in Cu interconnects with oxide and low-k dielectrics,” in
*Int. Symp. on physical and failure analysis of integrated circuits*, 2007. - Roy and C. M. Tan. “Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect,” in
*European Symp. on Reliability of Electron Devices, Failure physics and analysis*, 2006. - M. Tan, W. Li, K. T. Tan, and F. Low. “Development of highly accelerated electromigration test,” in
*European Symp. on Reliability of Electron Devices, Failure physics and analysis*, 2006. - Li and C. M. Tan. “Dynamic simulation of electromigration in polycrystalline thin film using combined Monte Carlo algorithm and finite element modeling,” in
*Symp. on Microelectronics*, 2006. - Roy, C. M. Tan, R. Kumar, and X. T. Chen. “Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via structures,” in
*European Symp. on Reliability of Electron Devices, Failure physics and Analysis*, 2005. - M. Tan, A. Roy, K. T. Tan, D. S. K. Ye, and F. Low. “Effect of vacuum break after the barrier layer deposition on the electromigratioin performance of aluminum based line interconnects,” in
*European Symp. on Reliability of Electron Devices, Failure physics and Analysis*, 2005. - Roy and C. M. Tan. “Extrapolation of electromigration reliability assessment from accelerated test for submicron interconnect via structure,” in
*Int. Conf. on Materials for advanced technologies*, 2005. - M. Tan. “Is electron wind force the sole driving force in electromingration of ULSI interconnection? (invited)” in
*Int. Conf. on Materials for Advanced Technologies*, 2005. - K. Lim, A. Roy, K. L. Pey, C. M. Tan, C. S. Seet, T. J. Lee, and D. Vigar. “Stress migration reliability of wide Cu interconnects with Gouging Vias,” in
*Int. reliability physics Symp.*, 2005, pp. 203. - Zhang, C. M. Tan, K. T. Tan, K. Y. Sim, and W. Y. Zhang. “Reliability improvement in Al metallization: a combination of statistical prediction and failure analytical methodology,” in
*European Symp. on Reliability of Electron Devices, Failure physics and analysis*, 2004, pp. 1843-1848. - Roy, C. M. Tan, V. V. Anand, K. Ahila, G. Zhang, and M. G. Subodh. “Effect of current crowding on copper dual damascene via bottom failure for ULSI applications,” in
*Int. Symp. on Physical and Failure Analysis of Integrated Circuits*, 2004. - Roy and C. M. Tan. “Current crowding effect on submicron copper dual damascene via bottom failure,” in
*Symp. on Microelectronics*, 2004. - M. Tan and G. Zhang. “Overcoming intrinsic weakness of ULSI metallization on electromigration performances,” in
*Int. Conf. on Materials for Advanced Technologies*, 2003. - S. Park, J. K. Low, C. M. Tan, and A. See. “Effects of Cu surface cleanness on electromigration reliability of Cu interconnects,” in
*Int. Conf. on Materials for Advanced Technologies*, 2003. - M. Tan and G. Zhang. “Investigation of the physical processes during electromigration of ULSI interconnection (invited),” in
*ANSYS User Meeting*, 2003. - M. Tan, A. C. M. Lim, C. T. Y. Tai, G. Zhang, H. S. Park, and S. M. Ong. “Effect of temperature uniformity of hot chuck on wafer level reliability electromigration test,” in
*JEDEX Conf.*, 2003. - Zhang, C. M. Tan, Z. Gan, K. Prasad, and D. H. Zhang. “Comparison of the time-dependent physical processes in the electromigration of deep submicron copper and aluminum interconnects,” in
*Materials Research Society Spring meeting*, 2003. - L. Yuan, C. Y. Lia, D. H. Zhang, K. Prasad, C. M. Tan, Y. J. Yuan, P. W. Lu, R. Kumar, and P. D. Foo. “Improvement of Ta diffusion barrier by NH3 plasma pre-treatment,” in
*Int. Semiconductor Technology Conf.*, 2002. - L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, C. M. Tan, R. Kumar, and P. D. Foo. “Characterization of a-Ta diffusion barrier for copper metallization,” in
*VMIC*, 2002. - L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, C. M. Tan, Y. J. Yuan, P. W. Lu, R. Kumar, and P. D. Foo. “Cubic Ta diffusion barrier layers for Cu metallization,” in
*2nd Int. Semiconductor Technology Conf.*, 2002. - M. Tan, W. L. See, and J. K. C. Tey. “Analysis of electromigration test data,” in
*IEEE 6th Int. Conf. on Solid-state and Integrated Circuit Technology*, 2001, pp. 964. - Y. Lim, C. M. Tan, K. Prasad, and D. H. Zhang. “Uncover the diffusion mechanism of atoms during electromigration test using non-stationary noise analysis,” in
*6th Int. Conf. on Solid-state and integrated circuit Technology*, 2001, pp. 921.

** **