- Chan, C. M. Tan, K. C. Lee, C. S. Tan, “Non-destructive degradation study of copper wire bond for its temperature cycling reliability evaluation,”
*Microelectronics Reliability*, vol.61, pp.56-63, 2016. - M. Tan and F. He, “Electromigration Modeling at Circuit Layout Level,”
*SpringerBrief on Reliability*, 2013. - Yizhen Tian*, Feifei He, Qi-Jun Zhang, Cher Ming Tan, Jianguo Ma, “Rapid ULSI Interconnect Reliability Analysis Using Neural Networks,”
*IEEE Trans. On Devices and Materials Reliability,*14, issue 1, pp. 400-407, February, 2013. - Ghosh*, J. Zhang, L. Zhang, Y. Dong, H. Li, C. M. Tan, G. Xia, and C. S. Tan, “Integration of Low-k Dielectric Liner in Through Silicon Via and Thermomechanical Stress Relief,”
*Physics Express*, vol. 5(12), pp. 126601-3, December, 2012. - D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei, “Creep mitigation in Sn-Ag-Cu composite solder with Ni-coated carbon nanotubes,”
*Journal of Materials Science: Materials in Electronics*, vol. 23, no. 5, pp. 1108-1115, May 2012. - D. Han*, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei, “Creep mitigation in Sn-Ag-Cu composite solder with Ni-coated carbon nanotubes,”
*Journal of Materials Science: Materials in Electronics*, vol. 23, no. 5, pp. 1108-1115, May, 2012. - D. Han*, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei,
**“**Effect of Ni-Coated Carbon Nanotubes on Interfacial Reaction and Shear Strength of Sn-Ag-Cu Solder Joints,”*Journal of Electronic Materials*, vol. 41, no. 9, pp. 2478-86, September, 2012. - D. Han*, H.Y. Jing, S.M.L. Nai, L.Y. Xu, C.M. Tan, J. Wei, “Interfacial reaction and shear strength of Ni-coated carbon nanotubes refinforced Sn-Ag-Cu solder joints during thermal cycling”,
*Intermetallics,*vol. 31, pp. 72-78, 2012. - M. Tan*, W. Li, and Z. Gan., “Applications of Finite element Methods for Reliability Study of ULSI Interconnections,”
*Microelectronics Reliability*, vol. 52, no. 8, pp. 1539-1545, August, 2012. - D. Han*, S. M. L. Nai, H. Y. Jing, L. Y. Xu, C. M. Tan, and J. Wei, “Development of a Sn-Ag-Cu solder reinforced with Ni-coated carbon nanotubes,”
*Journal of Materials Science-Materials in Electronics*, vol. 22, pp. 315-322, 2011. - C. Tan, C. M. Tan, X. W. Zhang, T. C. Chai, and D. Q. Yu, “Electromigration performance of through silicon via (TSV) – A modeling approach,”
*Microelectronics Reliability*, vol. 50, no. 9, pp. 1336-1340, 2010. - C. Tan, C. M. Tan, and T. C. Ng, “Addressing the challenges in solder resistance measurement for electromigration test,”
*Microelectronics Reliability*, vol. 50, pp. 1352-1354, 2010. - M. Fu, C. M. Tan, S. H. Wu, and H. B. Yao, “Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/low-K interconnects,”
*Microelectronics Reliability*, vol. 50, pp. 1332-1335, 2010. - D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei., 2010, “Indentation size effect on the creep behavior of a SnAgCu solder,”
*International Journal of Modern Physics B*, vol. 24, no. 1-2, pp. 267-275. - D. Han*, H.Y. Jing, S.M.L. Nai, L.Y. Xu, C.M. Tan, J. Wei
**,**2010, February,**“**Temperature Dependence of Creep and Hardness of Sn-Ag-Cu Lead-Free Solder,”*Journal of Electronic Materials*, v 39, n 2, p 223-229. - Z. Y. Loo, P. C. Lee, Z. X. Lim, N. Yantara, T. Y. Tee, C. M. Tan, and Z. Chen., 2010, “Interface fracture toughness assessment of solder joints using double cantilever beam test,”
*International Journal of Modern Physics B*, vol. 24, no. 1-2, pp. 164-174. - D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei, 2009, “Nanomechanical properties of a Sn-Ag-Cu solder reinforced with Ni-coated carbon nanotubes,”
*International Journal of Nanoscience*, vol. 9, no. 4, pp. 283-287. - D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, J. Wei, L.Y. Xu, S.R. Zhang, 2009, ”A modified constitutive model for creep of Sn-3.5Ag-0.7Cu solder joints,”
*Journal of Physics D: Applied Physics*, v 42, n 12. - G. Ma, M. Yao, and C. M. Tan. “Review of electromigration modeling of IC Interconnects,”
*Journal of the University of Electronic Science and Technology of China*, vol. 38, no. 5, pp. 495-504, 2009. - Roy, Y. Hou, and C. M. Tan. “Electromigration in width transition copper interconnect,”
*Microelectronics Reliability*, vol. 49, pp. 1086-1089, 2009. - Hou and C. M. Tan. “Comparison of stress-induced voiding phenomena in copper line-via structures with different dielectric materials,”
*Semiconductor Science and Technology*, vol. 24, pp. 85014-85022, 2009. - Li, C. M. Tan, and N. Raghavan. “Dynamic simulation of void nucleation during electromigration in narrow integrated circuit interconnects,”
*Journal of Applied Physics*, vol. 105, no. 1, pp. 014305, 2009. - M. Tan and N. Raghavan. “A bimodal 3-parameter lognormal mixture distribution for electromigration failures,” Thin Solid Films, vol. 516, pp. 8804-8809, 2008.
- Roy and C. M. Tan. “Very high current density package level electromigration test for copper interconnects,”
*Journal of Applied Physics*, vol. 103, no. 9, 2008. - Hou and C. M. Tan. “Stress-induced voiding study in integrated circuit interconnects,”
*Semiconductor Science and Technology*, vol.23, 2008. - Roy and C. M. Tan. “Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure,”
*Thin Solid Films*, vol. 515, no. 7-8, pp. 3867-3874, 2007. - Li, C. M. Tan, and Y. Hou. “Dynamic simulation of electromigration in polycrystalline interconnect thin film using combined Monte Carlo algorithm and finite element modeling,”
*Journal of Applied Physics*, vol. 101, no. 10, pp. 104314, 2007. - Li and C. M. Tan. “Enhanced Finite Element Modelling of Cu Electromigration using ANSYS and Matlab,”
*Microelectronics Reliability*, vol. 47, no. 9-11, pp. 1497-1501, 2007. - M. Tan and Y. Hou. “Lifetime modeling for stress-induced voiding in integrated circuit interconnections,”
*Applied Physics Letters*, vol. 91, no. 6, pp. 061904, 2007. - M. Tan, N. Raghavan, and A. Roy. “Application of Gamma Distribution in Electromigration for Submicron Interconnects,”
*Journal of Applied Physics*, vol. 102, no. 10, pp. 103703, 2007. - M. Tan and A. Roy. “Electromigration in ULSI Interconnects,”
*Materials Science and Engineering R-Reports*, vol. 58, no. 1-2, pp. 1-75, 2007. - M. Tan and Y. Hou. “Revisit to the finite element modeling of electromigration for narrow interconnects,”
*Journal of Applied Physics*, vol. 102, no. 3, pp. 33705, 2007. - M. Tan and A. Roy. “Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects,”
*Thin Solid Films*, vol. 504, no. 1-2, pp. 288-293, 2006. - M. Tan, W. Li, K. T. Tan, and F. Low. “Development of highly accelerated electromigration test,”
*Microelectronics Reliability*, vol. 46, no. 9-11, pp. 1638-1642, 2006. - Roy, R. Kumar, C. M. Tan, T. Wong, and C. H. Tung. “Electromigration in damascene copper interconnects of line width down to 100 nm,”
*Semiconductor Science and Technology*, vol. 21, pp. 1369, 2006. - Roy and C. M. Tan. “Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect,”
*Microelectronics Reliability*, vol. 46, no. 9-11, pp. 1652-1656, 2006. - M. Tan, A. Roy, A. V. Vairagar, A. Krishnamoorthy, and S. G. Mhaisalkar. “Current crowding effect on copper dual damascene via bottom failure for ULSI applications,”
*IEEE Trans. on Device and Materials Reliability*, vol. 5, no. 2, pp. 198, 2005. - Roy, C. M. Tan, R. Kumar, and X. T. Chen. “Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures,”
*Microelectronics Reliability*, vol. 45, no. 9-11, pp. 1443-1448, 2005. - M. Tan, A. Roy, K. T. Tan, D. Sim, K. Ye, and F. Low. “Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects,”
*Microelectronics Reliability*, vol. 45, no. 9-11, pp. 1449-1454, 2005. - M. Tan and G. Zhang. “Overcoming intrinsic weakness of ULSI metallization electromigration performances,”
*Thin Solid Films*, vol. 462-463, pp. 263-268, 2004. - L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, and C. M. Tan. “Study of Interactions between a-Ta films and SiO2 under rapid thermal annealing,”
*Thin Solid Films*, vol. 462-463, pp. 279, 2004. - L. Yuan, D. H. Zhang, C. Y. Li, J. Sudijono, and C. M. Tan. “Thermal Stability of Cu/a-Ta/SiO2/Si structures,”
*Thin Solid Films*, vol. 462-463, pp. 284, 2004. - W. Yang, D. H. Zhang, C. Y. Li, C. M. Tan, and K. Prasad. “Barrier layer effects on reliabilities of copper metallization,”
*Thin Solid Films*, vol. 462-463, pp. 288, 2004. - M. Tan, G. Zhang, and Z. Gan. “Dynamics Study of the physical processes in the Intrinsic line electromigration of deep-submicron copper and aluminum interconnects,”
*IEEE Transactions on Device and Materials Reliability*, vol. 4, no. 3, pp. 450-456, 2004. - M. Tan and Z. Gan. “Failure mechanisms of aluminum bond pad peeling during thermosonic bonding,”
*IEEE Transactions on Device and Materials Reliability*, vol. 3, no. 2, pp. 44-50, 2003. - L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, L. J. Tang, and C. M. Tan. “A new method for deposition of cubic Ta diffusion barrier for Cu metallization,”
*Thin Solid Films*, vol. 434, no. 1-2, pp. 126-129, 2003. - M. Tan and S. Y. Lim. “Application of wigner–ville distribution in electromigration noise analysis,”
*IEEE Transactions on Device and Materials Reliability*, vol. 2, no. 2, pp. 30-35, 2002. - M. Tan. “Effect of BOE etching time on wire bonding quality,”
*IEEE Transactions on Components and Packaging Technologies*, vol. 22, no. 4, pp. 551-557, 1999.

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