Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress – a modeling approachJOURNAL PAPERS
Comparison of SOI and PSOI LDMOS using electrical-thermal-stress coupled field modelingJOURNAL PAPERS
Electrical-thermal-stress coupled-field effect in SOI and partial SOI lateral power diodeJOURNAL PAPERS
Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI)JOURNAL PAPERS